onsemi Single 1 MOSFET, 9.4 A, 60 V Enhancement, 3-Pin IPAK (TO-251) FQU11P06TU
- RS-stocknr.:
- 671-5335
- Fabrikantnummer:
- FQU11P06TU
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 671-5335
- Fabrikantnummer:
- FQU11P06TU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 9.4 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | IPAK (TO-251) | |
| Maximum Drain Source Resistance (Rds) | 185 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation (Pd) | 2.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 9.4 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type IPAK (TO-251) | ||
Maximum Drain Source Resistance (Rds) 185 mΩ | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Maximum Power Dissipation (Pd) 2.5 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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