onsemi Single 1 MOSFET, 9.4 A, 60 V Enhancement, 3-Pin IPAK (TO-251) FQU11P06TU

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RS-stocknr.:
671-5335
Fabrikantnummer:
FQU11P06TU
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

60V

Package Type

IPAK (TO-251)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

+150°C

Transistor Configuration

Single

Number of Elements per Chip

1

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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