IXYS Linear Type N-Channel MOSFET, 12 A, 1 kV Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 686-7840
- Artikelnummer Distrelec:
- 302-53-422
- Fabrikantnummer:
- IXTH12N100L
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 20,19
(excl. BTW)
€ 24,43
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1 stuk(s) vanaf 29 december 2025
- Plus verzending 868 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 20,19 |
| 2 - 4 | € 16,65 |
| 5 - 9 | € 16,16 |
| 10 - 19 | € 15,70 |
| 20 + | € 14,93 |
*prijsindicatie
- RS-stocknr.:
- 686-7840
- Artikelnummer Distrelec:
- 302-53-422
- Fabrikantnummer:
- IXTH12N100L
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | Linear | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 400W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 155nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Distrelec Product Id | 30253422 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series Linear | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 400W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 155nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Distrelec Product Id 30253422 | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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