IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin TO-247 IXFH18N100Q3
- RS-stocknr.:
- 801-1382
- Fabrikantnummer:
- IXFH18N100Q3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 20,79
(excl. BTW)
€ 25,16
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 20,79 |
| 5 - 9 | € 17,90 |
| 10 - 29 | € 17,14 |
| 30 - 89 | € 15,87 |
| 90 + | € 15,04 |
*prijsindicatie
- RS-stocknr.:
- 801-1382
- Fabrikantnummer:
- IXFH18N100Q3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 660mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 830W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Height | 16.26mm | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 660mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 830W | ||
Maximum Operating Temperature 150°C | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Height 16.26mm | ||
Length 16.26mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS HiperFET 18 A 3-Pin TO-247 IXFH18N100Q3
- IXYS HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3
- IXYS HiperFET 18 A 3-Pin ISOPLUS247 IXFR24N100Q3
- IXYS HiperFET 18 A 3-Pin TO-268 IXFT18N100Q3
- IXYS HiperFET 70 A 3-Pin TO-247 IXFH70N20Q3
- IXYS HiperFET 30 A 3-Pin TO-247 IXFH30N50Q3
- IXYS HiperFET 50 A 3-Pin TO-247 IXFH50N60P3
- IXYS HiperFET 30 A 24-Pin SMPD MMIX1F44N100Q3