Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247 IRFP3206PBF

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Verpakkingsopties
RS-stocknr.:
688-6989
Fabrikantnummer:
IRFP3206PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

280W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

5.31 mm

Height

20.7mm

Length

15.87mm

Automotive Standard

No

Distrelec Product Id

304-35-445

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Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

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A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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