Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
688-7165
Fabrikantnummer:
IRFZ44ZPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

80W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10mm

Standards/Approvals

No

Width

4.4 mm

Height

8.77mm

Automotive Standard

No

Distrelec Product Id

304-43-456

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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