Infineon HEXFET N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4804
Fabrikantnummer:: IRL3705NPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 80,40

(excl. BTW)

€ 97,30

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

200 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,608	€ 80,40
100 - 200	€ 1,463	€ 73,15
250 - 450	€ 1,367	€ 68,35
500 - 950	€ 1,27	€ 63,50
1000 +	€ 1,174	€ 58,70

*prijsindicatie

RS-stocknr.:: 919-4804
Fabrikantnummer:: IRL3705NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-16V, +16V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	170W
	Typical Gate Charge Qg @ Vgs	98nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Width	4.69mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -16V, +16V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 170W
	Typical Gate Charge Qg @ Vgs 98nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Width 4.69mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF

This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.

Features & Benefits

• Low Rds(on) of 10mΩ for increased efficiency

• Operates in enhancement mode for innovative circuit designs

• Fast switching capabilities for improved system responsiveness

• Fully avalanche rated for durability in demanding situations

Applications

• Suitable for industrial power management systems

• Ideal for motor drive in automation

• Compatible with power supplies that require low thermal resistance

• Utilised in DC-DC converters for enhanced energy efficiency

What is the maximum power dissipation capability?

The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.

Is it suitable for high temperatures?

This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.

What is the significance of the gate threshold voltage range?

The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.

What considerations are there for using this in a circuit?

Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.