Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
688-7204
Fabrikantnummer:
IRLB3034PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

343A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

108nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

4.83 mm

Length

10.67mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

Distrelec Product Id

304-43-457

Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF


This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.

Features & Benefits


• Capable of handling a maximum continuous drain current of 343A

• Optimised for logic level drive for simplified control

• Designed for high-speed power switching requirements

• Wide operating temperature range from -55°C to +175°C

• Superior gate threshold of 1V to 2.5V benefits low voltage operations

Applications


• Ideal for DC motor drive systems

• Utilised in high efficiency synchronous rectification setups

• Suitable for uninterruptible power supplies

• Effective in hard switched and high-frequency circuits

What are the maximum power dissipation capabilities of this component?


The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.

How does the low RDS(on) contribute to performance?


The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.

Can this MOSFET be used in automation systems?


Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.

What mounting options does this component offer?


It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.

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