Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263

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€ 1.443,20

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€ 1.746,40

(incl. BTW)

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RS-stocknr.:
168-6012
Fabrikantnummer:
IRFS4010TRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

143nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Width

9.65 mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFS4010TRLPBF


This high-power MOSFET delivers strong performance across various applications, essential for contemporary electronic systems. Its enhancement mode operation and Advanced HEXFET technology provide efficient power management, making it suitable for applications that require dependable power control.

Features & Benefits


• Supports continuous drain current up to 180A for substantial loads

• Maximum drain-source voltage rated at 100V for flexibility

• Low Rds(on) of 4.7mΩ minimises power loss during operation

• Designed in a single configuration for easier integration

• Handles temperatures up to +175°C effectively

• Capable of high-speed power switching for efficient operations

Applications


• Used in synchronous rectification for switched-mode power supplies

• Suitable for uninterruptible power supply systems

• Applied in hard-switched and high-frequency circuits

• Utilised in automation equipment that needs efficient power management

• Integrates well into diverse electrical and mechanical projects

How does the resistance affect performance in high-frequency applications?


A low Rds(on) notably reduces heat generation and power loss, enhancing the efficiency of high-frequency power converters.

What gate voltage is required to ensure optimal operation?


The device operates effectively with a gate-source voltage between 2V and 4V, with 10V recommended for maximum efficiency.

Is installation straightforward for this component?


Yes, this surface mount MOSFET is designed for easy placement on PCBs, allowing for quick and reliable setups in various devices.

Can it handle thermal management effectively?


With a maximum operating junction temperature of +175°C, it is suitable for use in environments that require solid thermal performance.

What types of circuits can benefit from incorporating this component?


It is Ideal for high-speed switching applications, load driver circuits, and power management systems in automation and electrical fields.

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