Vishay IRF840S Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263 IRF840SPBF
- RS-stocknr.:
- 708-4752
- Artikelnummer Distrelec:
- 304-36-067
- Fabrikantnummer:
- IRF840SPBF
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,88
(excl. BTW)
€ 14,375
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- 70 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,376 | € 11,88 |
| 50 - 120 | € 2,232 | € 11,16 |
| 125 - 245 | € 2,136 | € 10,68 |
| 250 - 495 | € 1,898 | € 9,49 |
| 500 + | € 1,784 | € 8,92 |
*prijsindicatie
- RS-stocknr.:
- 708-4752
- Artikelnummer Distrelec:
- 304-36-067
- Fabrikantnummer:
- IRF840SPBF
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF840S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF840S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Width 9.65mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay IRF840S Series Power MOSFET, 500V Drain Source Voltage, 125W Maximum Power Dissipation - IRF840SPBF
Features and Benefits:
• 8A continuous drain current supports sustained load currents
• 125W power dissipation allows high-power handling
• 850mΩ Rds(on) reduces conduction losses at operational currents
• 63nC typical gate charge permits predictable switching performance
• 20V gate-source limit provides wide gate-drive margin
Applications
• Ideal for motor-drive inverter front-ends
• Used with boost-converter topologies in industrial units
• Can be used for switch-mode power-rectification modules
• Suitable for high-voltage load switching in test equipment
What mounting method is required for reliable assembly?
How does the device perform across temperature extremes?
What gate-drive limitations must be observed?
Are there automotive qualifications for this part?
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