Vishay SUP57N20-33 Type N-Channel MOSFET, 57 A, 200 V Enhancement, 3-Pin TO-220 SUP57N20-33-E3
- RS-stocknr.:
- 708-5014
- Fabrikantnummer:
- SUP57N20-33-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 20,70
(excl. BTW)
€ 25,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 240 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 4,14 | € 20,70 |
| 25 - 45 | € 3,56 | € 17,80 |
| 50 - 120 | € 3,064 | € 15,32 |
| 125 - 245 | € 2,90 | € 14,50 |
| 250 + | € 2,484 | € 12,42 |
*prijsindicatie
- RS-stocknr.:
- 708-5014
- Fabrikantnummer:
- SUP57N20-33-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SUP57N20-33 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SUP57N20-33 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 3.75W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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