Vishay Si2328DS Type N-Channel MOSFET, 1.15 A, 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-E3
- RS-stocknr.:
- 710-3266
- Fabrikantnummer:
- SI2328DS-T1-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,55
(excl. BTW)
€ 11,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 760 stuk(s) vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,955 | € 9,55 |
| 100 - 240 | € 0,725 | € 7,25 |
| 250 - 490 | € 0,67 | € 6,70 |
| 500 - 990 | € 0,574 | € 5,74 |
| 1000 + | € 0,498 | € 4,98 |
*prijsindicatie
- RS-stocknr.:
- 710-3266
- Fabrikantnummer:
- SI2328DS-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | Si2328DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 730mW | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series Si2328DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 730mW | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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