Vishay TP0610K Type P-Channel MOSFET, 0.19 A, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- RS-stocknr.:
- 152-6382
- Fabrikantnummer:
- TP0610K-T1-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 7,95
(excl. BTW)
€ 9,625
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 50 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,318 | € 7,95 |
| 250 - 600 | € 0,254 | € 6,35 |
| 625 - 1225 | € 0,19 | € 4,75 |
| 1250 - 2475 | € 0,159 | € 3,98 |
| 2500 + | € 0,142 | € 3,55 |
*prijsindicatie
- RS-stocknr.:
- 152-6382
- Fabrikantnummer:
- TP0610K-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.19A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TP0610K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Forward Voltage Vf | -1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 2.64 mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.19A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TP0610K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Forward Voltage Vf -1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 2.64 mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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