Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 919-0275
- Fabrikantnummer:
- SI2325DS-T1-E3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.236,00
(excl. BTW)
€ 1.497,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- Verzending vanaf 07 oktober 2026
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,412 | € 1.236,00 |
*prijsindicatie
- RS-stocknr.:
- 919-0275
- Fabrikantnummer:
- SI2325DS-T1-E3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -530mA | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | SOT-23 | |
| Series | Si2325DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 750mW | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | RoHS | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -530mA | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type SOT-23 | ||
Series Si2325DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 750mW | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals RoHS | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay Si2325DS Series MOSFET, -150V Maximum Drain Source Voltage, 1.2Ω Maximum Drain Source Resistance - SI2325DS-T1-E3
Features and Benefits:
Applications
What are the thermal limits for reliable operation?
How does the package influence board layout?
What electrical constraint should designers observe for gate driving?
How should power dissipation considerations affect cooling strategy?
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