Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP170PH6327XTSA1
- RS-stocknr.:
- 826-9250
- Fabrikantnummer:
- BSP170PH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 37,20
(excl. BTW)
€ 45,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.600 stuk(s) vanaf 06 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,744 | € 37,20 |
| 100 - 200 | € 0,551 | € 27,55 |
| 250 - 450 | € 0,514 | € 25,70 |
| 500 - 1200 | € 0,476 | € 23,80 |
| 1250 + | € 0,447 | € 22,35 |
*prijsindicatie
- RS-stocknr.:
- 826-9250
- Fabrikantnummer:
- BSP170PH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Width | 3.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-44-412 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Width 3.5 mm | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-44-412 | ||
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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