Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23 SI2333DDS-T1-GE3
- RS-stocknr.:
- 787-9222
- Artikelnummer Distrelec:
- 304-02-277
- Fabrikantnummer:
- SI2333DDS-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (10 eenheden, in een pakket van 10)*
€ 3,38
(excl. BTW)
€ 4,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- Laatste 160 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,338 | € 3,38 |
| 100 - 490 | € 0,318 | € 3,18 |
| 500 - 990 | € 0,287 | € 2,87 |
| 1000 - 2490 | € 0,27 | € 2,70 |
| 2500 + | € 0,254 | € 2,54 |
*prijsindicatie
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Elk (op een haspel van 3000)
€ 435,00
(excl. BTW)
€ 526,35
(incl. BTW)
- RS-stocknr.:
- 787-9222
- Artikelnummer Distrelec:
- 304-02-277
- Fabrikantnummer:
- SI2333DDS-T1-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | Si2333DDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series Si2333DDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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