Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- RS-stocknr.:
- 787-9288
- Fabrikantnummer:
- SIA447DJ-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 4,08
(excl. BTW)
€ 4,94
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.060 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,408 | € 4,08 |
| 100 - 490 | € 0,388 | € 3,88 |
| 500 - 990 | € 0,348 | € 3,48 |
| 1000 - 2490 | € 0,212 | € 2,12 |
| 2500 + | € 0,196 | € 1,96 |
*prijsindicatie
- RS-stocknr.:
- 787-9288
- Fabrikantnummer:
- SIA447DJ-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | TrenchFET | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series TrenchFET | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Automotive Standard No | ||
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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