Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3
- RS-stocknr.:
- 819-3936
- Fabrikantnummer:
- SQD19P06-60L_GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,48
(excl. BTW)
€ 15,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 150 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 9.950 stuk(s) vanaf 02 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 1,248 | € 12,48 |
*prijsindicatie
- RS-stocknr.:
- 819-3936
- Fabrikantnummer:
- SQD19P06-60L_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- TW
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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