Infineon OptiMOS P P-Channel MOSFET, 7.4 A, 30 V, 8-Pin DSO BSO200P03SHXUMA1

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RS-stocknr.:
857-8494
Fabrikantnummer:
BSO200P03SHXUMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

P

Maximum Continuous Drain Current

7.4 A

Maximum Drain Source Voltage

30 V

Package Type

DSO

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

5mm

Number of Elements per Chip

1

Width

4mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.65mm

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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