Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1
- RS-stocknr.:
- 892-2172
- Artikelnummer Distrelec:
- 304-44-410
- Fabrikantnummer:
- BSL308PEH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 40 eenheden)*
€ 15,04
(excl. BTW)
€ 18,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 5.800 stuk(s) vanaf 02 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 40 + | € 0,376 | € 15,04 |
*prijsindicatie
- RS-stocknr.:
- 892-2172
- Artikelnummer Distrelec:
- 304-44-410
- Fabrikantnummer:
- BSL308PEH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP BSL215CH6327XTSA1
- Infineon Isolated OptiMOS™ 2 Type N 1.5 A 6-Pin TSOP-6 BSL316CH6327XTSA1
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP BSL308CH6327XTSA1
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1