Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 3-Pin TO-220 IPP037N08N3GXKSA1
- RS-stocknr.:
- 914-0182
- Artikelnummer Distrelec:
- 304-37-846
- Fabrikantnummer:
- IPP037N08N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 23,59
(excl. BTW)
€ 28,54
(incl. BTW)
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- Plus verzending 20 stuk(s) vanaf 27 augustus 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 2,359 | € 23,59 |
| 50 - 90 | € 2,242 | € 22,42 |
| 100 - 240 | € 2,171 | € 21,71 |
| 250 - 490 | € 2,004 | € 20,04 |
| 500 + | € 1,865 | € 18,65 |
*prijsindicatie
- RS-stocknr.:
- 914-0182
- Artikelnummer Distrelec:
- 304-37-846
- Fabrikantnummer:
- IPP037N08N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Length 10.36mm | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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