Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4882
Fabrikantnummer:: IRL540NPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 42,85

(excl. BTW)

€ 51,85

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

50 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 50 stuk(s) vanaf 14 oktober 2026
Plus verzending 1.000 stuk(s) vanaf 12 november 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,857	€ 42,85
100 - 200	€ 0,668	€ 33,40
250 - 450	€ 0,625	€ 31,25
500 - 1200	€ 0,583	€ 29,15
1250 +	€ 0,54	€ 27,00

*prijsindicatie

RS-stocknr.:: 919-4882
Fabrikantnummer:: IRL540NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	74nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	140W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	-16V, +16V
	Maximum Operating Temperature	175°C
	Width	4.69mm
	Standards/Approvals	No
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 74nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 140W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs -16V, +16V
	Maximum Operating Temperature 175°C
	Width 4.69mm
	Standards/Approvals No
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF

This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.

Features & Benefits

• Continuous drain current capability of 36A for demanding applications

• Low Rds(on) of 44mΩ minimises power losses during operation

• Enhancement mode design improves switching characteristics for efficiency

• Power dissipation rating of up to 140W accommodates high-performance scenarios

• Operating temperature range from -55°C to +175°C allows versatility

• Through hole mounting facilitates easy integration into existing systems

Applications

• Power management in industrial automation systems

• Electric motor control in robotics

• DC-DC converters in renewable energy systems

• Power supplies requiring efficient switching functionality

• Consumer electronics for effective power distribution

What are the maximum voltage and current ratings?

The maximum drain-source voltage is 100V, with a continuous drain current of 36A.

How does the low Rds(on) improve performance?

A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.

What is the significance of the enhancement mode?

This mode allows for improved control over operation, enabling efficient switching and application versatility.

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.

How should it be mounted for optimal performance?

It is designed for through hole mounting, ensuring secure installation and connectivity in circuits.