Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
919-4898
Fabrikantnummer:
IRLZ34NPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

68W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.69 mm

Length

10.54mm

Standards/Approvals

No

Height

8.77mm

Automotive Standard

No

Land van herkomst:
CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF


This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits


• Low on-resistance of 35mΩ reduces power loss

• High power dissipation capability of 68W enhances performance

• Operating temperature range from -55°C to +175°C ensures versatility

• Typical gate charge of 25nC at 5V enables faster switching

• Compact TO-220AB package enables efficient PCB layout

Applications


• Utilised in DC-DC converters for efficient power conversion

• Appropriate for motor driver circuits in industrial automation

• Effective in power management systems for renewable energy

• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?


The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?


The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?


Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?


A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.

Is it compatible with various electronic circuits?


This device is versatile and can be integrated into different circuit configurations, including automotive and industrial power electronics.

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