onsemi 1.2 kV 12 A Diode 2-Pin TO-247-2LD NDSH10120C-F155
- RS-stocknr.:
- 218-671
- Fabrikantnummer:
- NDSH10120C-F155
- Fabrikant:
- onsemi
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€ 5,96
(excl. BTW)
€ 7,21
(incl. BTW)
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- Plus verzending 899 stuk(s) vanaf 09 november 2026
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Verpakking(en) | Per verpakking | Bespaar |
|---|---|---|
| 1 - 9 | € 5,96 | - |
| 10 - 99 | € 5,36 | 10% |
| 100 - 499 | € 4,96 | 16% |
| 500 - 999 | € 4,60 | 22% |
| 1000 + | € 4,12 | 30% |
*prijsindicatie
- RS-stocknr.:
- 218-671
- Fabrikantnummer:
- NDSH10120C-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.39V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 546A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.39V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 546A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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