onsemi 1.2 kV 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- RS-stocknr.:
- 218-673
- Fabrikantnummer:
- NDSH20120C-F155
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 10 meer toe om € 8,60 te besparen
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€ 8,56
(excl. BTW)
€ 10,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 900 stuk(s) vanaf 09 november 2026
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Verpakking(en) | Per verpakking | Bespaar |
|---|---|---|
| 1 - 9 | € 8,56 | - |
| 10 - 99 | € 7,70 | € 8,60 |
| 100 - 499 | € 7,10 | € 146,00 |
| 500 - 999 | € 6,59 | € 985,00 |
| 1000 + | € 5,92 | € 2.640,00 |
*prijsindicatie
- RS-stocknr.:
- 218-673
- Fabrikantnummer:
- NDSH20120C-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 896A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 896A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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