onsemi 1200 V 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- RS-stocknr.:
- 218-673
- Fabrikantnummer:
- NDSH20120C-F155
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 1 eenheid)*
€ 8,66
(excl. BTW)
€ 10,48
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Verpakking(en) | Per verpakking |
|---|---|
| 1 - 9 | € 8,66 |
| 10 - 99 | € 7,80 |
| 100 - 499 | € 7,20 |
| 500 - 999 | € 6,67 |
| 1000 + | € 5,99 |
*prijsindicatie
- RS-stocknr.:
- 218-673
- Fabrikantnummer:
- NDSH20120C-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 200μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 896A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 200μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 896A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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