onsemi 1200 V 50 A Diode 2-Pin TO-247-2LD NDSH50120C-F155
- RS-stocknr.:
- 277-032
- Fabrikantnummer:
- NDSH50120C-F155
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 24,52
(excl. BTW)
€ 29,67
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 391 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 24,52 |
| 10 - 99 | € 22,07 |
| 100 + | € 20,35 |
*prijsindicatie
- RS-stocknr.:
- 277-032
- Fabrikantnummer:
- NDSH50120C-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1568A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1568A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide Schottky Diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Avalanche rated 380 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
No reverse recovery
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