Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247 IDWD20G120C5XKSA1

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Verpakkingsopties
RS-stocknr.:
222-4842
Fabrikantnummer:
IDWD20G120C5XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Mount Type

Surface

Product Type

SiC Diode

Package Type

TO-247

Maximum Continuous Forward Current If

20A

Peak Reverse Repetitive Voltage Vrrm

1200V

Series

5th Generation CoolSiCTM 1200V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Maximum Forward Voltage Vf

1.65V

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

166μA

Peak Non-Repetitive Forward Surge Current Ifsm

190A

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Width

15.8 mm

Length

40.21mm

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 20 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

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