Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

Bekijk deze categorie
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 11,68

(excl. BTW)

€ 14,13

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 75 stuk(s) vanaf 30 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 4€ 11,68
5 - 9€ 11,09
10 - 24€ 10,62
25 - 49€ 10,16
50 +€ 9,47

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
222-4844
Fabrikantnummer:
IDWD30G120C5XKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Mount Type

Surface

Product Type

SiC Diode

Package Type

TO-247

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

1200V

Series

5th Generation CoolSiC 1200V Schottky Diode

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Maximum Forward Voltage Vf

1.65V

Peak Non-Repetitive Forward Surge Current Ifsm

240A

Peak Reverse Current Ir

248μA

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Length

40.21mm

Width

15.8 mm

Automotive Standard

No

The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.

No reverse recovery current, no forward recovery voltage

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

Tight forward voltage distribution

High surge current capability

Gerelateerde Links