Toshiba 30 V 5 A Switching Diode Schottky 2-Pin USC
- RS-stocknr.:
- 236-3562
- Fabrikantnummer:
- CUS10S30,H3F(T
- Fabrikant:
- Toshiba
Subtotaal (1 rol van 3000 eenheden)*
€ 153,00
(excl. BTW)
€ 186,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,051 | € 153,00 |
*prijsindicatie
- RS-stocknr.:
- 236-3562
- Fabrikantnummer:
- CUS10S30,H3F(T
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Mount Type | Surface | |
| Product Type | Switching Diode | |
| Package Type | USC | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 0.5mA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 5A | |
| Maximum Forward Voltage Vf | 0.45V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Mount Type Surface | ||
Product Type Switching Diode | ||
Package Type USC | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 0.5mA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 5A | ||
Maximum Forward Voltage Vf 0.45V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Toshiba Schottky barrier diode having silicon epitaxial. It has general purpose USC package which is equivalent to SOD-323 and SC-76 packages. It is used in high speed switching applications.
Higher reverse leakage
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