Toshiba 650V 10A, Schottky Diode, 2-Pin TO-220 TRS10E65C,S1AQ(S
- RS-stocknr.:
- 896-2606
- Fabrikantnummer:
- TRS10E65C,S1AQ(S
- Fabrikant:
- Toshiba
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 896-2606
- Fabrikantnummer:
- TRS10E65C,S1AQ(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Mounting Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current | 10A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Diode Configuration | Single | |
| Diode Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Drop | 1.7V | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
| Peak Non-Repetitive Forward Surge Current | 50A | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Mounting Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current 10A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Single | ||
Diode Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 1.7V | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 50A | ||
- Land van herkomst:
- CN
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
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