Intelligent Memory IM4G08D3FDBG-107I SDRAM 4 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- RS-stocknr.:
- 588-646
- Fabrikantnummer:
- IM4G08D3FDBG-107I
- Fabrikant:
- Intelligent Memory
Subtotaal (1 eenheid)*
€ 4,14
(excl. BTW)
€ 5,01
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 4,14 |
*prijsindicatie
- RS-stocknr.:
- 588-646
- Fabrikantnummer:
- IM4G08D3FDBG-107I
- Fabrikant:
- Intelligent Memory
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Intelligent Memory | |
| Memory Size | 4GB | |
| Product Type | SDRAM | |
| Organisation | 64M x 8 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 8 | |
| Maximum Clock Frequency | 1066MHz | |
| Maximum Random Access Time | 1.25ns | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Pin Count | 78 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Standards/Approvals | RoHS | |
| Height | 1.2mm | |
| Length | 10.6mm | |
| Series | IM4G(04/08)D3FDB | |
| Width | 7.5 mm | |
| Maximum Supply Voltage | 1.45V | |
| Minimum Supply Voltage | 1.283V | |
| Automotive Standard | AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk Intelligent Memory | ||
Memory Size 4GB | ||
Product Type SDRAM | ||
Organisation 64M x 8 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 8 | ||
Maximum Clock Frequency 1066MHz | ||
Maximum Random Access Time 1.25ns | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Pin Count 78 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Standards/Approvals RoHS | ||
Height 1.2mm | ||
Length 10.6mm | ||
Series IM4G(04/08)D3FDB | ||
Width 7.5 mm | ||
Maximum Supply Voltage 1.45V | ||
Minimum Supply Voltage 1.283V | ||
Automotive Standard AEC-Q100 | ||
- Land van herkomst:
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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