Intelligent Memory IME1G08D3EEBG-15EI SDRAM 1 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- RS-stocknr.:
- 588-649
- Fabrikantnummer:
- IME1G08D3EEBG-15EI
- Fabrikant:
- Intelligent Memory
Subtotaal (1 eenheid)*
€ 5,82
(excl. BTW)
€ 7,04
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 5,82 |
*prijsindicatie
- RS-stocknr.:
- 588-649
- Fabrikantnummer:
- IME1G08D3EEBG-15EI
- Fabrikant:
- Intelligent Memory
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Intelligent Memory | |
| Memory Size | 1GB | |
| Product Type | SDRAM | |
| Organisation | 16M x 8 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 800MHz | |
| Maximum Random Access Time | 1.25ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 78 | |
| Maximum Operating Temperature | 95°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Series | IME1G(08/16)D3EEB | |
| Length | 10.5mm | |
| Maximum Supply Voltage | 1.575V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 1.425V | |
| Alles selecteren | ||
|---|---|---|
Merk Intelligent Memory | ||
Memory Size 1GB | ||
Product Type SDRAM | ||
Organisation 16M x 8 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 800MHz | ||
Maximum Random Access Time 1.25ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 78 | ||
Maximum Operating Temperature 95°C | ||
Standards/Approvals RoHS, JEDEC | ||
Series IME1G(08/16)D3EEB | ||
Length 10.5mm | ||
Maximum Supply Voltage 1.575V | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 1.425V | ||
- Land van herkomst:
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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