Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q

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Verpakkingsopties
RS-stocknr.:
231-8074
Fabrikantnummer:
QH12TZ600Q
Fabrikant:
Power Integrations
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Merk

Power Integrations

Product Type

SiC Schottky

Maximum Forward Current If

12A

Diode Configuration

Single

Mount Type

Through Hole

Sub Type

SiC Schottky

Package Type

TO-220

Pin Count

2

Peak Reverse Recovery Time trr

20.5ns

Maximum Peak Reverse Repetitive Voltage Vrrm

600V

Maximum Forward Voltage Vf

3.1V

Maximum Power Dissipation Pd

61mW

Peak Non-Repetitive Forward Surge Current Ifsm

100A

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Width

4.7 mm

Standards/Approvals

No

Height

30.73mm

Automotive Standard

No

The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.

Features and Benefits


Low QRR, low IRRM, low tRR

High dIF/dt capable (1000 A / μs)

Soft recovery

AEC-Q101 qualified

Fab, assembly and test certified to IATF 16949

Eliminates need for snubber circuits

Reduces EMI filter component size & count

Enables extremely fast switching

Applications


Power Factor Correction boost diode in on-board charger

Output rectifier of on-board charger

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