MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Omschrijving Prijs Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation Automotive Standard
RS-stocknr. 710-5060
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€ 3,126
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P 110 A 60 V 7 mΩ - 1V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement 3.75 W -
RS-stocknr. 919-0938
FabrikantnummerSUM110P06-07L-E3
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€ 1,835
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P 110 A 60 V 7 mΩ - 1V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement 3.75 W -
RS-stocknr. 787-9036
FabrikantnummerSI2318CDS-T1-GE3
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€ 0,272
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N 5.6 A 40 V 51 mΩ - 1.2V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 2.1 W -
RS-stocknr. 919-4205
FabrikantnummerSI2318CDS-T1-GE3
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€ 0,125
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N 5.6 A 40 V 51 mΩ - 1.2V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 2.1 W -
RS-stocknr. 165-6297
FabrikantnummerSIA416DJ-T1-GE3
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€ 0,246
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N 11.3 A 100 V 130 mΩ - 1.6V -20 V, +20 V PowerPAK SC-70 Surface Mount 6 Single Enhancement 19 W -
RS-stocknr. 812-3139
FabrikantnummerSI2365EDS-T1-GE3
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€ 0,24
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P 4.7 A 20 V 67.5 mΩ - 0.4V -8 V, +8 V SOT-23 (TO-236) Surface Mount 3 Single Enhancement 1.7 W -
RS-stocknr. 818-1441
FabrikantnummerSIA416DJ-T1-GE3
FabrikantVishay
€ 0,281
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N 11.3 A 100 V 130 mΩ - 1.6V -20 V, +20 V PowerPAK SC-70 Surface Mount 6 Single Enhancement 19 W -
RS-stocknr. 165-6934
FabrikantnummerSI2365EDS-T1-GE3
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€ 0,073
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P 4.7 A 20 V 67.5 mΩ - 0.4V -8 V, +8 V SOT-23 (TO-236) Surface Mount 3 Single Enhancement 1.7 W -
RS-stocknr. 178-0905
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€ 0,516
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N 9.2 A 600 V 750 mΩ - 2V -30 V, +30 V TO-220AB Through Hole 3 Single Enhancement 170 W -
RS-stocknr. 541-1663
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P 3.1 A 100 V 1.2 Ω - 2V -20 V, +20 V IPAK (TO-251) Through Hole 3 Single Enhancement 2.5 W -
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N 9.2 A 600 V 750 mΩ - 2V -30 V, +30 V TO-220AB Through Hole 3 Single Enhancement 170 W -
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FabrikantnummerSI2309CDS-T1-GE3
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€ 0,481
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P 1.2 A 60 V 345 mΩ - 1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 1 W -
RS-stocknr. 787-9018
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€ 0,338
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P 185 mA 60 V 10 Ω - 1V -20 V, +20 V SOT-23 (TO-236) Surface Mount 3 Single Enhancement 350 mW -
RS-stocknr. 787-9042
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€ 0,504
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P 4.4 A 40 V 108 mΩ - 1.2V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 2.5 W -
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€ 0,204
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P 0.185 A 60 V 9 Ω -3V -1V ±20 V SOT-23 Surface Mount 3 Single Enhancement 350 mW -
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€ 0,189
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P 4.4 A 40 V 108 mΩ - 1.2V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 2.5 W -