MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
Lees meer Lees minder

Filters

61 - 80 van 11394 producten worden weergegeven
Resultaten per pagina
Omschrijving Prijs Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Transistor Configuration Maximum Power Dissipation Number of Elements per Chip
RS-stocknr. 787-9036
FabrikantnummerSI2318CDS-T1-GE3
FabrikantVishay
€ 0,272
Each (In a Pack of 20)
Aantal stuks
N 5.6 A 40 V 51 mΩ SOT-23 - Surface Mount 1.2V 3 -20 V, +20 V Enhancement Single 2.1 W 1
RS-stocknr. 896-7358
FabrikantnummerIRL60B216
FabrikantInfineon
€ 3,082
Each (In a Pack of 5)
Aantal stuks
N 305 A 60 V 2.2 mΩ TO-220 2.4V Through Hole 1V 3 -20 V, +20 V Enhancement Single 375 W 1
RS-stocknr. 919-4205
FabrikantnummerSI2318CDS-T1-GE3
FabrikantVishay
€ 0,125
Each (On a Reel of 3000)
Aantal stuks
N 5.6 A 40 V 51 mΩ SOT-23 - Surface Mount 1.2V 3 -20 V, +20 V Enhancement Single 2.1 W 1
RS-stocknr. 780-4742
FabrikantnummerNTR4003NT3G
FabrikantON Semiconductor
€ 0,161
Each (In a Pack of 50)
Aantal stuks
N 560 mA 30 V 2 Ω SOT-23 1.4V Surface Mount - 3 -20 V, +20 V Enhancement Single 830 mW 1
RS-stocknr. 121-9615
FabrikantnummerZVP2106ASTZ
FabrikantDiodesZetex
€ 0,334
Each (On a Tape of 2000)
Aantal stuks
P 280 mA 60 V 5 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement Single 700 mW 1
RS-stocknr. 671-4878
FabrikantnummerFDP8874
FabrikantON Semiconductor
€ 1,282
Each (In a Pack of 5)
Aantal stuks
N 16 A 30 V 5 mΩ TO-220AB - Through Hole 1.2V 3 -20 V, +20 V Enhancement Single 110 W 1
RS-stocknr. 178-4752
FabrikantnummerFQP27P06
FabrikantON Semiconductor
€ 1,046
Each (In a Tube of 50)
Aantal stuks
P 27 A 60 V 70 mΩ TO-220AB 4V Through Hole 2V 3 -25 V, +25 V Enhancement Single 120 W 1
RS-stocknr. 145-5359
FabrikantnummerFDP8874
FabrikantON Semiconductor
€ 1,10
Each (In a Tube of 50)
Aantal stuks
N 16 A 30 V 5 mΩ TO-220AB - Through Hole 1.2V 3 -20 V, +20 V Enhancement Single 110 W 1
RS-stocknr. 790-5283
FabrikantnummerNTR4003NT1G
FabrikantON Semiconductor
€ 0,065
Each (In a Pack of 100)
Aantal stuks
N 560 mA 30 V 2 Ω SOT-23 1.4V Surface Mount - 3 -20 V, +20 V Enhancement Single 690 mW 1
RS-stocknr. 671-5339
FabrikantnummerFQU13N06LTU
FabrikantON Semiconductor
€ 0,624
Each (In a Pack of 5)
Aantal stuks
N 11 A 60 V 115 mΩ IPAK (TO-251) - Through Hole 1V 3 -20 V, +20 V Enhancement Single 2.5 W 1
RS-stocknr. 145-9317
FabrikantnummerIRL60B216
FabrikantInfineon
€ 2,63
Each (In a Tube of 50)
Aantal stuks
N 305 A 60 V 2.2 mΩ TO-220 2.4V Through Hole 1V 3 -20 V, +20 V Enhancement Single 375 W 1
RS-stocknr. 823-1842
FabrikantnummerZVP2106ASTZ
FabrikantDiodesZetex
€ 0,615
Each (In a Pack of 10)
Aantal stuks
P 280 mA 60 V 5 Ω TO-92 3.5V Through Hole - 3 -20 V, +20 V Enhancement Single 700 mW 1
RS-stocknr. 922-7620
FabrikantnummerZXM61N03FTA
FabrikantDiodesZetex
€ 0,151
Each (On a Reel of 3000)
Aantal stuks
N 1.4 A 30 V 300 mΩ SOT-23 - Surface Mount 1V 3 -20 V, +20 V Enhancement Single 806 mW 1
RS-stocknr. 166-1855
FabrikantnummerFQU13N06LTU
FabrikantON Semiconductor
€ 0,528
Each (In a Tube of 70)
Aantal stuks
N 11 A 60 V 115 mΩ IPAK (TO-251) - Through Hole 1V 3 -20 V, +20 V Enhancement Single 2.5 W 1
RS-stocknr. 154-964
FabrikantnummerZXM61N03FTA
FabrikantDiodesZetex
€ 0,388
Each (In a Pack of 25)
Aantal stuks
N 1.4 A 30 V 300 mΩ SOT-23 - Surface Mount 1V 3 -20 V, +20 V Enhancement Single 806 mW 1
RS-stocknr. 671-5064
FabrikantnummerFQP27P06
FabrikantON Semiconductor
€ 1,23
Each (In a Pack of 5)
Aantal stuks
P 27 A 60 V 70 mΩ TO-220AB 4V Through Hole 2V 3 -25 V, +25 V Enhancement Single 120 W 1
RS-stocknr. 792-0885
FabrikantnummerBSS123,215
FabrikantNexperia
€ 0,086
Each (On a Reel of 100)
Aantal stuks
N 150 mA 100 V 6 Ω SOT-23 2.8V Surface Mount 1V 3 -20 V, +20 V Enhancement Single 250 mW 1
RS-stocknr. 885-5485
FabrikantnummerDMG6402LDM-7
FabrikantDiodesZetex
€ 0,28
Each (In a Pack of 40)
Aantal stuks
N 5.3 A 30 V 40 mΩ SOT-26 2V Surface Mount - 6 -20 V, +20 V Enhancement Single 1.12 W 1
RS-stocknr. 725-9237
FabrikantnummerIRF7351PBF
FabrikantInfineon
€ 1,326
Each (In a Pack of 5)
Aantal stuks
N 8 A 60 V 17.8 mΩ SOIC 4V Surface Mount 2V 8 -20 V, +20 V Enhancement Isolated 2 W 2
RS-stocknr. 124-8828
FabrikantnummerSPP80P06PHXKSA1
FabrikantInfineon
€ 2,307
Each (In a Tube of 50)
Aantal stuks
P 80 A 60 V 23 mΩ TO-220 4V Through Hole 2.1V 3 -20 V, +20 V Enhancement Single 340 W 1
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
60 V, N-channel Trench MOSFET, N-channel enhancement mode ...
Description:
60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatibleVery fast switchingTrench MOSFET technologyElectroStatic Discharge (ESD) protection > 2 kV ...
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS ...
Description:
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.