N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Vishay IRF640SPBF

RS-stocknr.:: 178-0826
Fabrikantnummer:: IRF640SPBF
Fabrikant:: Vishay

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Vishay IRF640SPBF

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RS-stocknr.:: 178-0826
Fabrikantnummer:: IRF640SPBF
Fabrikant:: Vishay

Datasheet

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.67mm
Width	9.65mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	70 nC @ 10 V
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Vishay IRF640SPBF

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