MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



Looking for MOSFET Drivers?


...
Lees meer Lees minder

Filters

81 - 100 van 11394 producten worden weergegeven
Resultaten per pagina
Omschrijving Prijs Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Maximum Gate Threshold Voltage Mounting Type Minimum Gate Threshold Voltage Pin Count Maximum Gate Source Voltage Channel Mode Transistor Configuration Maximum Power Dissipation Number of Elements per Chip
RS-stocknr. 761-2704
FabrikantnummerSTD1NK60-1
€ 0,764
Each (In a Pack of 5)
Aantal stuks
N 1 A 600 V 8.5 Ω IPAK (TO-251) 3.7V Through Hole 2.25V 3 -30 V, +30 V Enhancement Single 30 W 1
RS-stocknr. 124-1704
FabrikantnummerFDN340P
FabrikantON Semiconductor
€ 0,086
Each (On a Reel of 3000)
Aantal stuks
P 2 A 20 V 70 mΩ SOT-23 - Surface Mount 0.4V 3 -8 V, +8 V Enhancement Single 500 mW 1
RS-stocknr. 124-9035
Fabrikantnummer2N7002H6327XTSA2
FabrikantInfineon
€ 0,043
Each (On a Reel of 3000)
Aantal stuks
N 300 mA 60 V 4 Ω SOT-23 2.5V Surface Mount 1.5V 3 -20 V, +20 V Enhancement Single 500 mW 1
RS-stocknr. 166-1130
FabrikantnummerIPB180P04P4L02ATMA1
FabrikantInfineon
€ 1,358
Each (On a Reel of 1000)
Aantal stuks
P 180 A 40 V 3.9 mΩ D2PAK (TO-263) 2.2V Surface Mount 1.2V 7 -16 V, +16 V Enhancement Single 150 W 1
RS-stocknr. 165-6934
FabrikantnummerSI2365EDS-T1-GE3
FabrikantVishay
€ 0,075
Each (On a Reel of 3000)
Aantal stuks
P 4.7 A 20 V 67.5 mΩ SOT-23 (TO-236) - Surface Mount 0.4V 3 -8 V, +8 V Enhancement Single 1.7 W 1
RS-stocknr. 354-4913
FabrikantnummerFDV304P
FabrikantON Semiconductor
€ 2,20
Each
Aantal stuks
P 460 mA 25 V 1.1 Ω SOT-23 - Surface Mount 0.65V 3 +8 V Enhancement Single 350 mW 1
RS-stocknr. 671-0435
FabrikantnummerFDN340P
FabrikantON Semiconductor
€ 0,44
Each (In a Pack of 5)
Aantal stuks
P 2 A 20 V 70 mΩ SOT-23 - Surface Mount 0.4V 3 -8 V, +8 V Enhancement Single 500 mW 1
RS-stocknr. 911-4791
FabrikantnummerBSP171PH6327XTSA1
FabrikantInfineon
€ 0,226
Each (On a Reel of 1000)
Aantal stuks
P 1.9 A 60 V 300 mΩ SOT-223 2V Surface Mount 1V 3 + Tab -20 V, +20 V Enhancement - 1.8 W 1
RS-stocknr. 486-0171
FabrikantnummerIRF630
€ 0,906
Each (In a Pack of 5)
Aantal stuks
N 9 A 200 V 400 mΩ TO-220 4V Through Hole 2V 3 -20 V, +20 V Enhancement Single 75 W 1
RS-stocknr. 857-8491
FabrikantnummerBSP135H6906XTSA1
FabrikantInfineon
€ 0,782
Each (On a Reel of 1000)
Aantal stuks
N 120 mA 600 V 60 Ω SOT-223 1V Surface Mount 2.1V 3 + Tab -20 V, +20 V Depletion Single 1.8 W 1
RS-stocknr. 671-0598
FabrikantnummerFDS6675BZ
FabrikantON Semiconductor
€ 0,518
Each (In a Pack of 5)
Aantal stuks
P 11 A 30 V 13 mΩ SOIC - Surface Mount 1V 8 -25 V, +25 V Enhancement Single 2.5 W 1
RS-stocknr. 671-0520
FabrikantnummerFDS4685
FabrikantON Semiconductor
€ 0,818
Each (In a Pack of 5)
Aantal stuks
P 8.2 A 40 V 27 mΩ SOIC - Surface Mount 1V 8 -20 V, +20 V Enhancement Single 2.5 W 1
RS-stocknr. 915-4954
FabrikantnummerIRF7351TRPBF
FabrikantInfineon
€ 1,067
Each (In a Pack of 10)
Aantal stuks
N 8 A 60 V 17.8 mΩ SOIC 4V Surface Mount 2V 8 -20 V, +20 V Enhancement Isolated 2 W 2
RS-stocknr. 752-7773
Fabrikantnummer2N7002H6327XTSA2
FabrikantInfineon
€ 0,076
Each (In a Pack of 100)
Aantal stuks
N 300 mA 60 V 4 Ω SOT-23 2.5V Surface Mount 1.5V 3 -20 V, +20 V Enhancement Single 500 mW 1
RS-stocknr. 166-2594
FabrikantnummerFDS4685
FabrikantON Semiconductor
€ 0,356
Each (On a Reel of 2500)
Aantal stuks
P 8.2 A 40 V 27 mΩ SOIC - Surface Mount 1V 8 -20 V, +20 V Enhancement Single 2.5 W 1
RS-stocknr. 915-4989
FabrikantnummerIRF9393TRPBF
FabrikantInfineon
€ 0,417
Each (In a Pack of 20)
Aantal stuks
P 9.2 A 30 V 32.5 mΩ SOIC 2.4V Surface Mount 1.3V 8 -25 V, +25 V Enhancement Single 2.5 W 1
RS-stocknr. 168-8970
FabrikantnummerIRF7351TRPBF
FabrikantInfineon
€ 0,507
Each (On a Reel of 4000)
Aantal stuks
N 8 A 60 V 17.8 mΩ SOIC 4V Surface Mount 2V 8 -20 V, +20 V Enhancement Isolated 2 W 2
RS-stocknr. 168-7564
FabrikantnummerSTD1NK60-1
€ 0,635
Each (In a Tube of 75)
Aantal stuks
N 1 A 600 V 8.5 Ω IPAK (TO-251) 3.7V Through Hole 2.25V 3 -30 V, +30 V Enhancement Single 30 W 1
RS-stocknr. 485-8370
FabrikantnummerSTS5PF30L
€ 0,60
Each (In a Pack of 5)
Aantal stuks
P 5 A 30 V 80 mΩ SOIC - Surface Mount 1V 8 -16 V, +16 V Enhancement Single 2.5 W 1
RS-stocknr. 798-2839
FabrikantnummerPSMN014-40YS,115
FabrikantNexperia
€ 0,431
Each (In a Pack of 10)
Aantal stuks
N 46 A 40 V 20 mΩ SOT-669 4V Surface Mount 2V 4 -20 V, +20 V Enhancement Single 56 W 1
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
60 V, N-channel Trench MOSFET, N-channel enhancement mode ...
Description:
60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Logic level compatibleVery fast switchingTrench MOSFET technologyElectroStatic Discharge (ESD) protection > 2 kV ...
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS ...
Description:
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS ...
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.