Vishay IRF740AS Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ASPBF

RS-stocknr.:: 256-7277
Fabrikantnummer:: IRF740ASPBF
Fabrikant:: Vishay

Vishay IRF740AS Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ASPBF

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500 +	€ 1,944	€ 9,72

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RS-stocknr.:: 256-7277
Fabrikantnummer:: IRF740ASPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Series	IRF740AS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.55Ω
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Gate Source Voltage Vgs	10V
	Forward Voltage Vf	2V
	Maximum Operating Temperature	+150°C
	Height	4.83mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Series IRF740AS
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.55Ω
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Gate Source Voltage Vgs 10V
	Forward Voltage Vf 2V
	Maximum Operating Temperature +150°C
	Height 4.83mm
	Standards/Approvals RoHS
	Automotive Standard No

Vishay IRF740AS Series Power MOSFET, 400V Drain Source Voltage, 125W Power Dissipation - IRF740ASPBF

This power MOSFET is a high-voltage, N-channel switching device designed for surface-mount power applications. It is intended for use where robust switching of high drain voltages is required and operates across a wide temperature range for demanding thermal environments.

Features and Benefits:

• 400V drain rating enables high-voltage switching applications
• 10A continuous drain current supports substantial load currents
• 0.55Ω Rds(on) reduces conduction losses in switching stages
• 125W power dissipation allows significant thermal throughput
• 36nC typical gate charge facilitates controlled switching transitions
• 10V gate tolerance suits common drive-voltage architectures

Applications

• Suitable for switch-mode power supplies in industrial systems
• Ideal for high-voltage motor-driver front ends
• Used for power conversion in renewable-energy inverters
• Can be used for auxiliary power rails in telecom equipment
• Employed in general-purpose high-voltage switching circuits

What package type should I anticipate for board layout considerations?

It is supplied in a TO-263 package intended for surface mounting, permitting heat-sinking via the PCB and allowing for larger current paths.

What ambient temperature extremes can the device withstand during operation?

The transistor is rated to function across an operating temperature span from -55°C up to +150°C, accommodating both low-temperature starts and elevated thermal conditions.

How does gate drive affect switching performance?

With a typical gate charge of 36nC at a 10V gate drive, switching speed and gate-drive current requirements should be balanced to manage transition losses and EMI.

What type of conductivity does the device use for switching?

It employs an N-channel conduction channel, suitable for low-side and high-side arrangements depending on circuit topology.