Infineon BFQ790H6327XTSA1 RF Bipolar Transistor, 250 mA NPN, 5 V, 4-Pin SOT-89
- RS-stocknr.:
- 216-8358
- Fabrikantnummer:
- BFQ790H6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 7,74
(excl. BTW)
€ 9,365
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 7.195 stuk(s) vanaf 29 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,548 | € 7,74 |
| 50 - 120 | € 1,298 | € 6,49 |
| 125 - 245 | € 1,224 | € 6,12 |
| 250 - 495 | € 1,132 | € 5,66 |
| 500 + | € 1,056 | € 5,28 |
*prijsindicatie
- RS-stocknr.:
- 216-8358
- Fabrikantnummer:
- BFQ790H6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 250mA | |
| Maximum Collector Emitter Voltage Vceo | 5V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 6.1V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 1.85GHz | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFQ790 | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Height | 2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 250mA | ||
Maximum Collector Emitter Voltage Vceo 5V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 6.1V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 1.85GHz | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFQ790 | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Height 2mm | ||
Automotive Standard No | ||
The Infineon BFQ series is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. It is used in commercial and industrial wireless infrastructure, ISM band medium power amplifiers and drivers, automated test equipment, UHF television, CATV and DBS.
High gain
High maximum RF input power
High compression point
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