Infineon RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1431
- Fabrikantnummer:
- BFP540ESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 645,00
(excl. BTW)
€ 780,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,215 | € 645,00 |
| 6000 + | € 0,204 | € 612,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1431
- Fabrikantnummer:
- BFP540ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Maximum Transition Frequency ft | 30GHz | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Minimum DC Current Gain hFE | 50 | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Series | BFP540 | |
| Length | 2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 10V | ||
Maximum Transition Frequency ft 30GHz | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Minimum DC Current Gain hFE 50 | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Series BFP540 | ||
Length 2mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).
Outstanding Gms 21.5 dB
Noise figure F 0.9 dB
Gold metallization for high reliability
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