Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1434
- Fabrikantnummer:
- BFP540FESDH6327XTSA1
- Fabrikant:
- Infineon
Afbeelding representeert productcategorie
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 259-1434
- Fabrikantnummer:
- BFP540FESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 30GHz | |
| Minimum DC Current Gain hFE | 50 | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.55mm | |
| Length | 1.4mm | |
| Standards/Approvals | RoHS | |
| Series | BFP540 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 10V | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 30GHz | ||
Minimum DC Current Gain hFE 50 | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.55mm | ||
Length 1.4mm | ||
Standards/Approvals RoHS | ||
Series BFP540 | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value of 1000 V (HBM).
SIEGET 45 - Line
Pb-free (RoHS compliant) package
Gerelateerde Links
- Infineon RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 80 V, 4-Pin SOT-343
- Infineon BFP193WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP620H7764XTSA1 RF Bipolar Transistor 80 V, 4-Pin SOT-343
- Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4 V, 4-Pin SOT-343