Infineon BFP620H7764XTSA1 RF Bipolar Transistor, 7.5 mA NPN, 80 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1437
- Fabrikantnummer:
- BFP620H7764XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 2,89
(excl. BTW)
€ 3,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 2.990 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,289 | € 2,89 |
| 100 - 240 | € 0,275 | € 2,75 |
| 250 - 490 | € 0,269 | € 2,69 |
| 500 - 990 | € 0,251 | € 2,51 |
| 1000 + | € 0,203 | € 2,03 |
*prijsindicatie
- RS-stocknr.:
- 259-1437
- Fabrikantnummer:
- BFP620H7764XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 7.5mA | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 7.5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Power Dissipation Pd | 185mW | |
| Maximum Transition Frequency ft | 65GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | BFP620 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 7.5mA | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 7.5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Power Dissipation Pd 185mW | ||
Maximum Transition Frequency ft 65GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series BFP620 | ||
Height 0.9mm | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon highly linear low noise RF transistor provides outstanding performance for a wide range of wireless applications. It is based on Infineon's reliable high volume SiGe:C technology & Ideal for CDMA and WLAN applications.
Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application
Accurate SPICE GP model enables effective design in process
Pb-free (RoHS compliant) package
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