Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- RS-stocknr.:
- 827-5154
- Fabrikantnummer:
- BFP640ESDH6327XTSA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 827-5154
- Fabrikantnummer:
- BFP640ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 70GHz | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Power Dissipation Pd | 200mW | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Width | 2.1mm | |
| Series | BFP640 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 70GHz | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Power Dissipation Pd 200mW | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -65°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free (RoHS) | ||
Width 2.1mm | ||
Series BFP640 | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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