Infineon RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS-stocknr.:
- 261-3957
- Fabrikantnummer:
- BFR460L3E6327XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (15000 eenheden, op een rol van 15000)*
€ 5.040,00
(excl. BTW)
€ 6.105,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 15.000 stuk(s) vanaf 01 oktober 2026
- Plus verzending 15.000 stuk(s) vanaf 10 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 15000 - 15000 | € 0,336 | € 5.040,00 |
| 30000 - 30000 | € 0,302 | € 4.530,00 |
| 45000 + | € 0,272 | € 4.080,00 |
*prijsindicatie
- RS-stocknr.:
- 261-3957
- Fabrikantnummer:
- BFR460L3E6327XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Transition Frequency ft | 22GHz | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 90 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 200mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.6mm | |
| Series | BFR | |
| Length | 1mm | |
| Standards/Approvals | RoHS | |
| Height | 0.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Transition Frequency ft 22GHz | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 90 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 200mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 0.6mm | ||
Series BFR | ||
Length 1mm | ||
Standards/Approvals RoHS | ||
Height 0.4mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
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