Infineon BFR460L3E6327XTMA1 RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS-stocknr.:
- 261-3957
- Fabrikantnummer:
- BFR460L3E6327XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 15000 eenheden)*
€ 5.040,00
(excl. BTW)
€ 6.105,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 15.000 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 15.000 stuk(s) vanaf 10 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 15000 - 15000 | € 0,336 | € 5.040,00 |
| 30000 - 30000 | € 0,302 | € 4.530,00 |
| 45000 + | € 0,272 | € 4.080,00 |
*prijsindicatie
- RS-stocknr.:
- 261-3957
- Fabrikantnummer:
- BFR460L3E6327XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 22GHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 400μm | |
| Series | BFR | |
| Width | 600μm | |
| Standards/Approvals | RoHS | |
| Length | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 22GHz | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 400μm | ||
Series BFR | ||
Width 600μm | ||
Standards/Approvals RoHS | ||
Length 1mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
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