Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9
- RS-stocknr.:
- 258-0650
- Fabrikantnummer:
- BFR840L3RHESDE6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 3,28
(excl. BTW)
€ 3,97
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- 12.890 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 15.000 stuk(s) vanaf 01 oktober 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,328 | € 3,28 |
| 100 - 240 | € 0,31 | € 3,10 |
| 250 - 490 | € 0,298 | € 2,98 |
| 500 - 990 | € 0,285 | € 2,85 |
| 1000 + | € 0,266 | € 2,66 |
*prijsindicatie
- RS-stocknr.:
- 258-0650
- Fabrikantnummer:
- BFR840L3RHESDE6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSLP-3-9 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Power Dissipation Pd | 75mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Transition Frequency ft | 75GHz | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1mm | |
| Height | 0.31mm | |
| Series | BFR840L3RHESD | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSLP-3-9 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Power Dissipation Pd 75mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Transition Frequency ft 75GHz | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 1mm | ||
Height 0.31mm | ||
Series BFR840L3RHESD | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
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