Infineon BFS481H6327XTSA1 RF Bipolar Transistor, 20 mA, 20 V, 6-Pin SOT-363
- RS-stocknr.:
- 273-7308
- Fabrikantnummer:
- BFS481H6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 858,00
(excl. BTW)
€ 1.038,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 09 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,286 | € 858,00 |
*prijsindicatie
- RS-stocknr.:
- 273-7308
- Fabrikantnummer:
- BFS481H6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Two (Galvanic) Internal Isolated Transistors In One Package | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 8GHz | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Power Dissipation Pd | 175mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Series | BFS481 | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Two (Galvanic) Internal Isolated Transistors In One Package | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 8GHz | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Power Dissipation Pd 175mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Series BFS481 | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.
Halogen free
Easy to use
Pb free package
RoHS compliant
With visible leads
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