Infineon RF Bipolar Transistor, 45 mA NPN, 13 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1447
- Fabrikantnummer:
- BFP740FESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 3000 eenheden)*
€ 606,00
(excl. BTW)
€ 732,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 december 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,202 | € 606,00 |
| 6000 - 6000 | € 0,192 | € 576,00 |
| 9000 + | € 0,18 | € 540,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1447
- Fabrikantnummer:
- BFP740FESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 44GHz | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP | |
| Standards/Approvals | RoHS | |
| Length | 1.4mm | |
| Height | 0.55mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 44GHz | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP | ||
Standards/Approvals RoHS | ||
Length 1.4mm | ||
Height 0.55mm | ||
Automotive Standard No | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT), It is wireless communications: WLAN, WiMax and UWB.
Low noise figure NFmin 0.85 dB at 5.5 GHz, 3 V, 6 mA
High gain Gms 19.5 dB at 5.5 GHz, 3 V, 15 mA
OIP3 24.5 dBm at 5.5 GHz, 3 V, 15 mA
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