Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3

RS-stocknr.:: 268-8299
Fabrikantnummer:: SIHG150N60E-GE3
Fabrikant:: Vishay

Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3

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1000 +	€ 2,915	€ 5,83

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RS-stocknr.:: 268-8299
Fabrikantnummer:: SIHG150N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHG
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Length	15.7mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 650V
	Series SIHG
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Length 15.7mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHG150N60E-GE3

Land van herkomst:: CN

Vishay SIHG Series MOSFET, 650V Drain-Source Voltage, 22A Continuous Drain Current - SIHG150N60E-GE3

This N-channel MOSFET is designed to switch and control high-voltage power in industrial electronics and automation equipment. It operates as an enhancement-mode transistor for use in discrete power stages where high blocking voltage and significant current capacity are required. The device is supplied in a through-hole TO-247AC package suited to conventional assembly and heat-sinking arrangements.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 22A continuous current supports substantial load handling • 0.158Ω low Rds(on) reduces conduction losses • 179W power dissipation allows robust thermal throughput • 36nC typical gate charge for predictable switching behaviour • 30V gate tolerance accommodates common drive voltages

Applications

• Suitable for high-voltage DC-DC converters in industrial systems • Ideal for switch-mode power supplies in manufacturing equipment • Used for motor drive stages requiring high-voltage switching • Can be used for line-side power conversion in automation racks • Used for laboratory power electronics development and testing

What temperature range can it operate within?

The device functions across a wide ambient span from -55°C up to a maximum junction limit of 150°C for demanding thermal environments.

How is it best mounted for heat management?

The through-hole TO-247AC format permits direct attachment to heatsinks using the package tab and standard mounting hardware to improve thermal transfer.

What gate drive considerations should be observed?

The gate should be driven within ±30V absolute limits and switching waveforms should account for the typical 36nC gate charge to manage transition losses and driver sizing.

What pin configuration is provided?

It is a three-pin transistor layout compatible with common power PCB footprints and through-hole assembly processes.