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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Maximum Continuous Collector Current	25 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20.0V
	Number of Transistors	6
	Configuration	3 Phase
	Package Type	DIP26
	Mounting Type	Through Hole
	Channel Type	N

	Alles selecteren
	Merk onsemi
	Maximum Continuous Collector Current 25 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20.0V
	Number of Transistors 6
	Configuration 3 Phase
	Package Type DIP26
	Mounting Type Through Hole
	Channel Type N

Datasheet - NXH25C120L2C2SG

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 25 Ampere and 1600 Volts rectifiers, six 25 Ampere and 1200 Volts IGBTs with inverse diodes, one 25 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant

onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole

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