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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Maximum Continuous Collector Current	35 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20.0V
	Number of Transistors	6
	Package Type	DIP26
	Configuration	3 Phase
	Mounting Type	Through Hole
	Channel Type	N

	Alles selecteren
	Merk onsemi
	Maximum Continuous Collector Current 35 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20.0V
	Number of Transistors 6
	Package Type DIP26
	Configuration 3 Phase
	Mounting Type Through Hole
	Channel Type N

Datasheet - NXH35C120L2C2ESG

The ON Semiconductor transfer molded power module with low thermal resistance substrate containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant

onsemi NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole

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