STMicroelectronics STGB30H65DFB2, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 12,18

(excl. BTW)

€ 14,74

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
Per verpakking*
5 - 45€ 2,436€ 12,18
50 - 95€ 2,284€ 11,42
100 - 245€ 1,828€ 9,14
250 - 495€ 1,524€ 7,62
500 +€ 1,342€ 6,71

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
204-9868
Fabrikantnummer:
STGB30H65DFB2
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

167W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.6mm

Length

10.4mm

Series

Trench Gate Field Stop

Width

9.35 mm

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Gerelateerde Links